| PART |
Description |
Maker |
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| IDT71V416VL |
(IDT71V416VL/VS) 3.3V CMOS Static RAM 4 Meg
|
Integrated Device Technology
|
| IDT71V424 IDT71V424S12Y IDT71V424S15Y IDT71V424S20 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)
|
Integrated Device Technology
|
| IDT71028 IDT71028S12Y IDT71028S15Y IDT71028S17Y ID |
CMOS STATIC RAM 1 MEG (256K x 4-BIT)
|
IDT[Integrated Device Technology]
|
| P3C1021-12TI P3C1021-12TC P3C1021-20TI P3C1021-20T |
HIGH SPEED 64K x 16 (1 MEG) STATIC CMOS RAM
|
Pyramid Semiconductor C...
|
| IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| P3C1011-35TM P3C1011 P3C1011-10JC P3C1011-10JI P3C |
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 35 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 25 ns, PDSO44
|
Pyramid Semiconductor C...
PYRAMID[Pyramid Semiconductor Corporation]
Pyramid Semiconductor, Corp.
|
| IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44
TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36
TRANS NPN W/RES 80 HFE NS-B1
3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源
ASYNCHRONOUS STATIC RAM
|
ETC
ICSI[Integrated Circuit Solution Inc]
|
| CAT5114SI-00TE13 CAT5114U-10TE13 CAT5114U-00TE13 C |
DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC
128K x 8 Static RAM
512K x 24 Static RAM 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料
|
Analog Devices, Inc.
|
